ISRO Scientists ‘C’ position Interview Experience

I would like to share my recent interview experience for the ISRO Scientists ‘C’ position at SAC Ahmedabad. The interview panel comprised approximately 12-13 members, with the session commencing under the guidance of the chairman.

Introduction:

The interview began with a succinct introduction, providing an overview of my academic and professional background.

M.Tech Project in VLSI:

I was invited to elaborate on my M.Tech project in VLSI, with a specific emphasis on its practical applications within the field.

Design Flow in VLSI:

A detailed discussion ensued regarding the design flow in VLSI, encompassing various stages and methodologies involved in the process.

Low-Power Techniques:

Queries regarding low-power techniques utilized in VLSI were presented, highlighting strategies aimed at optimizing power consumption in integrated circuits.

Technology Comparison:

A comparative analysis between 180nm and 5nm technology in VLSI was initiated, exploring the evolution and implications of advancements in semiconductor fabrication.

Recent Advancements:

The panel sought insights into recent advancements in VLSI technology, reflecting on emerging trends and innovations shaping the industry landscape.

Op-Amp Feedback:

Types of Op-Amp feedback mechanisms were elucidated, demonstrating an understanding of fundamental operational amplifier configurations and their applications.

Positive Feedback Applications:

Applications of positive feedback in operational amplifiers were discussed, illustrating scenarios where this configuration enhances circuit performance.

CMRR Concept:

The concept of Common-Mode Rejection Ratio (CMRR) and its ideal value were elucidated, underscoring its significance in amplifier design and performance evaluation.

Semiconductor Devices Enumeration:

An enumeration of different types of semiconductor devices was provided, encompassing a diverse range of electronic components and their functionalities.

IGBT Explanation:

An explanation of Insulated Gate Bipolar Transistor (IGBT) and its significance in power electronics applications was presented, highlighting its role in modern semiconductor devices.

Schottky Contact Applications:

The applications of Schottky contact were explored, emphasizing its utility in semiconductor junctions and device fabrication processes.

Amplifier Classes Discussion:

Different classes of amplifiers were discussed, covering conduction angle and efficiency considerations essential for amplifier design and analysis.

BJT vs. MOSFET Speed Comparison:

A comparative analysis between the speed characteristics of Bipolar Junction Transistors (BJT) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) was conducted, examining their respective performance attributes.

Sampling Theorem Explanation:

The principles of the sampling theorem and its practical usage in signal processing applications were elucidated, demonstrating an understanding of fundamental concepts in digital signal processing.

Nyquist Criterion Overview:

An overview of the Nyquist criterion was provided, highlighting its significance in determining the minimum sampling rate required to accurately reconstruct a continuous-time signal from its discrete samples.

Bandpass Sampling Applications:

The concept of bandpass sampling and its applications in telecommunications and signal processing were explored, showcasing its relevance in frequency-selective signal acquisition and processing.

Gate Delay Impact on Circuit Performance:

The implications of gate delay in VLSI circuits and its impact on overall circuit performance were discussed, emphasizing the critical role of timing considerations in digital circuit design and optimization.

The interview session spanned a total duration of 25 minutes, providing a comprehensive platform to showcase both technical expertise and practical insights into the realm of VLSI and semiconductor engineering.