ELECTRONIC DEVICES AND CIRCUIT||FIELD EFFECT TRANSISTROR || GATE 2022 || EC || MCQ||1 MARK

An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG=2VVG​=2V. The corresponding inversion charge density QINQIN​ is 2.2μC/cm22.2μC/cm2. Assume oxide capacitance per unit area as COX=1.7μF/cm2COX​=1.7μF/cm2. For VG=4VVG​=4V, the value of QINQIN​ is ______μC/cm2μC/cm2 (rounded off to one decimal place).

(GATE 2017 || EC || MCQ||1 MARK)