ELECTRONIC DEVICES AND CIRCUIT||FIELD EFFECT TRANSISTROR || GATE 2024 || EC || NAT||1 MARK

An NMOS transistor operating in the linear region has IDS of 5μA at VDS​ of 0.1 V . Keeping VGS ​ constant, the VDS​ is increased to 1.5 V.
Given that μnCoxWL=50μA/V2, the transconductance at the new operating point (in μA/V, rounded off to two decimal places) is