ELECTRONIC DEVICES AND CIRCUIT||BJT || GATE 2014 || EC || NAT||1 MARK

Consider two BJTs biased at the same collector current with area, A₁ = 0.2 μm×0.2 μm and A₂ = 300 μm×300 μm. Assuming that all other device parameters are identical kT/q = 26 mV, the intrinsic carrier concentrations is 1 × 10¹⁰ cm^–3, and q = 1.6 × 10^–19 C, the difference between the base-emitter voltages (in mV) of the two BJTs (i.e., V_BE1- V_BE2) is __

(GATE 2014 || EC || NAT||1 MARK)