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ELECTRONIC DEVICES AND CIRCUIT||FIELD EFFECT TRANSISTROR || GATE 2011 || EC || MCQ||2 MARK
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The channel resistance when VGS = -3 V is
(GATE 2011 || EC || MCQ||2 MARK)
360 Ω
917 Ω
1000 Ω
3000 Ω
This question is part of this quiz :
GATE EC || ELECTRONIC DEVICES AND CIRCUIT || FET || PYQS (2000-2025)Share your thoughts in the comments
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