ELECTRONIC DEVICES AND CIRCUIT||FIELD EFFECT TRANSISTROR || GATE 2017 || EC || MCQ||1 MARK

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The cross-section of a JFET is shown in the following figure. Let VG be –2V and let Vp be the initial pinch-off voltage. If the width W is doubled (with other geometrical parameters and doping levels remaining
the same), then the ratio between the mutual transconductances of the initial and the modified JFET i

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( GATE 2017 || EC || MCQ||1 MARK)

4

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GATE EC || ELECTRONIC DEVICES AND CIRCUIT || FET || PYQS (2000-2025)
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