ELECTRONIC DEVICES AND CIRCUIT||BJT || GATE 2006 || EC || MCQ||1 MARK

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The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of the effective base-width caused by

(GATE 2006 || EC || MCQ||1 MARK)

electron-hole recombination at the base

the reverse biasing of the base-collector junction

the forward biasing of emitter-base junction

the early removal of stored base charge during saturation to-cut-off switching

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