ELECTRONIC DEVICES AND CIRCUIT||BJT || GATE 2004 || EC || MCQ||1 MARK

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If for a silicon n-p-n transistor, the base-to- emitter voltage (VBE) is 0.7 V and the collector to base voltage (VCB) is 0.2V, then the transistor is operating in the


(GATE 2004 || EC || MCQ||1 MARK)

normal active mode


 saturation mode


inverse active mode


cutoff mode


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