ELECTRONIC DEVICES AND CIRCUIT||BJT || GATE 2004 || EC || MCQ||1 MARK

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The neutral base width of a bipolar transistor, biased in the active region, is 0.5 μm. The maximum electron concentration and the diffusion constant in the base are 1014/cm3 and Dn = 25 cm2/sec respectively in the base, the collector current density is (the electron charge is 1.6 × 10–19 Coulomb)

(GATE 2004 || EC || MCQ||1 MARK

800 A/cm2

8 A/cm2


 200 A/cm2

2 A/cm2


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