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ELECTRONIC DEVICES AND CIRCUIT||BJT || GATE 2014 || EC || MCQ||1 MARK
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The impurity commonly used for realizing the base region of a silicon n-p-n transistor is
(GATE 2014 || EC || MCQ||1 MARK)
Gallium
Indium
Boron
Phosphorus
This question is part of this quiz :
GATE EC || ELECTRONIC DEVICES AND CIRCUIT|| BJT || PYQS(2000-2025)Share your thoughts in the comments
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