Data Structure
Java
Python
HTML
Interview Preparation
- Interview Prep
- Tutorials
- Tracks
ELECTRONIC DEVICES AND CIRCUIT||FIELD EFFECT TRANSISTROR || GATE 2024 || EC || MSQ||1 MARK
Last Updated :
Discuss
Comments
Which of the following statements is/are true for a BJT with respect to its DC current gain β ?
(GATE 2024 || EC || MSQ||1 MARK)
Under high-level injection condition in forward active mode, β will decrease with increase in the magnitude of collector current.
Under low-level injection condition in forward active mode, where the current at the emitter-base junction is dominated by recombination-generation process, β will decrease with increase in the magnitude of collector current.
β will be lower when the BJT is in saturation region compared to when it is in active region.
A higher value of β will lead To a lower value of the collector-to-emitter breakdown voltage
This question is part of this quiz :
GATE EC || ELECTRONIC DEVICES AND CIRCUIT || FET || PYQS (2000-2025)Share your thoughts in the comments
GeeksforGeeks
Article Tags :